1990.09-1994.07：湖北大学物理系，物理教育专业教育学学士学位

1995.09-1998.07：湖北大学压电陶瓷技术研究所，无机非金属材料专业工学硕士学位

1998.07-2001.08：湖北大学物理学与电子技术学院，助教

2001.09-2004.07：中国科学院物理研究所，，凝聚态物理专业理学博士学位

2003.09-2003.12：澳大利亚Wollongong大学工程物理系，交换学生

2004.09-2005.04：日本神户大学工学部电子电气工程系，非常勤研究员

2005.04-2006.07：武汉大学物理科学与技术学院，博士后

2006.8至今 湖北大学材料科学与工程学院，教授

1、半导体光电材料与器件

2、铁电压电材料与器件

Xunzhong Shang,Lei Zhang, Jingang Fang, Mingkai Li, and Yunbin He,Annealing and characterization of CuInS2thin films prepared on sapphire substrates by pulsed laser deposition, Materials Research Innovations,2014 ，18（S4）：22~25 Xunzhong Shang,Jinming Guo, Wanping Xiao, Yinmei Lu, Gang Chang, Taosheng Zhou, Yunbin He, The Effects of Ta Substitution and K/Na Ratio Variation on the Microstructure and Properties of (K,Na)NbO3-Based Lead Free Piezoelectric Ceramics,Journal of Electronic Materials,2014，43：1424~1431. Xunzhong Shang,Zhiqiang Wang, Mingkai Li, Lei Zhang, Jingang Fang, Jiali Tai, Yunbin He, A numerical simulation study of CuInS2 solar cells, Thin solid films, 2014，550 ：649~653. Xunzhong Shang,Heng Liu, Jinming Guo, Dan Jiang, Taosheng Zhou, Yunbin He, Enhancing the properties of high-temperature BiScO3-PbTiO3 piezoceramics via Bi addition, Mater. Res. Bull., 2013，48 ：3072~3076. Xunzhong Shang,Jingang Fang, Lei Zhang, Mingkai Li, Gang Chang, Pai Li, Yunbin He, Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates, J. Alloy. Compd., 2013，553 ：282~285 X.Z.Shang, Jing wu , W.X.Wang, Q.Huang, J.M.Zhou，Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures, Solid State Electronics,51,63-67(2007) X. Z. Shang,S. D. Wu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy,Journal of Physics D: Applied Physics,39,1800-1804(2006) X.Z.Shang,P.J.Niu, B.N.Mao,W.X.Wang, L.W.Guo, Q.Huang, J.M.Zhou, InGaP/GaAs Heterojunction Bipolar Transistor Grown by Solid-source Molecular Beam Epitaxy with a GaP decomposition Source, Solid State communication,138，114-117（2006） X.Z.Shang, P.J.Niu, W.L.Guo, W.X.Wang, Q.Huang, J.M.Zhou, Photoluminescence investigation of Be-doped NpnAlGaAs/GaAs heterojunction bipolar transistor structures, Physica E :Low-dimensional Systems and Nanostructures.30, 36(2005) X.Z.Shang,W.C.Wang, S.D.Wu, Z.G.Xing, L.W.Guo, Q.Huang and J.M.Zhou, Effects of Indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs 2D electron gas, Semiconductor Science and Technology 19,519(2004) X.Z. Shang,L.W.Guo, S.D.Wu, P.J.Niu, Q.Huang and J.M.Zhou, Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source, Journal of Crystal Growth.262,14(2004) X.Z.Shang,P.J.Niu, S.D.Wu, W.X.Wang, L.W.Guo, Q.Huang, J.M.Zhou, Properties of InGaP/GaAs grown by solid-source molecular beam epitaxy with a GaP decomposition source,Chinese Physics Letters.20 (9), 1616(2003) 尚勋忠，方金钢，王志强，黎明锴，周桃生，何云斌.黄铜矿结构CuInS2 陶瓷和薄膜的制备及性能研究,湖北大学报（自然科学版）,2013,35(1):89~92 尚勋忠，刘越彦，孙锐，郭金明，周桃生，常钢，何云斌. 抗还原型PZT 压电陶瓷的制备与性能,硅酸盐学报，2013,41（3）:288~291 尚勋忠，陈威，曹万强.弛豫铁电体介电可调性的研究,物理学报，2012,61(21):217701 尚勋忠，松下和征，井上知也，喜多隆，和田修，保田英洋，森博太郎. 自组织InAs/GaAs量子点的表面氮化研究.固体电子学研究与进展,2007,27(2):151~153 尚勋忠，张源伟，周桃生，何云斌，柴荔英，邝安祥，一种压电陶瓷降压变压器材料的研究，硅酸盐学报,2000,28(2):176~180 尚勋忠，王文冲，郭丽伟，吴曙东，黄绮，周均铭,掺In对反型AlGaAs/GaAs异质界面质量的改善及应用，半导体学报,2004,25,1128~1131