张希珍
副教授
个人简介
张希珍 副教授 教育背景 日本产业技术综合研究所博士后、访问研究员(2008-2012) 吉林大学理学博士(2002-2007) 吉林大学工学学士(1998-2002)代表性项目 (1)辽宁省博士启动基金,20170520082,超薄MOS电容模型 及测量方法研究,2017/09-2019/08,在研,主持。 (2)横向项目,技术开发(委托)合同,MOD材料在MOS 电容应用中的技术开发,2018/04-2019/04,在研,主持。
研究领域
小尺寸MOS电容模型及其测量方法;稀土发光材料;铁电 场存储器材料与器件;聚合物光波导器件
学术兼职
IEEE电气电子工程师学会会员
近期论文
(1)Erroranalysisandfrequencyselectionguidelinesfor three-frequencycorrectioninMOScapacitors,Semicond.Sci.Technol.33115006,2018.(SCI) (2)FrequencydispersionanalysisofthindielectricMOS capacitorinafive-elementmodel,J.Phys.D:Appl.Phys.,51,055105,2018.(SCI) (3)Frequencydispersionanalysisofparasiticparametersinthin dielectricMOScapacitor,J.Nanosci.Nanotechnol.,18,7473–7478,2018.(SCI) (4)Singlefrequencycorrectionbasedonthree-elementmodelfor thindielectricMOScapacitor,Solid-StateElectron.,129,97-102,2017.(SCI) (5)AnewMOScapacitancecorrectionmethodbasedon five-elementmodelbycombiningdouble-frequencyC-Vand I-Vmeasurements,IEEEElectronDeviceLett.,37,1328-1331,2016.(SCIEI) (6)64kbFerroelectric-Gate-Transistor-Integrated NAND-Flash-Memorywith7.5VProgramandLongData Retention,JapaneseJournalofAppliedPhysics,51,04DD01,2012.(SCI) (7)FeFETLogicCircuitsforOperatingA64kbFeNANDFlash MemoryArray,IntegratedFerroelectrics,132,114-121,2012.(SCI) (8)0.5VBit-Line-VoltageSelf-Boost-Programmingin Ferroelectric-NANDFlashMemory,IEEEInternational MemoryWorkshop,California,USA,pp.155-158,2011.(国 际会议) (9)First64kbFerroelectric-NANDFlashMemoryArraywith 7.5VProgram,10 8EnduranceandLongDataRetention,ExtendedAbstractsofthe2011InternationalConferenceon SolidStateDevicesandMaterials(SSDM),Nagoya,Japan,pp.975-976,2011.(国际会议) (10)1.53μmphotoluminescencefromErYb(DBM)3MA containingpolymer,AppliedPhysicsB,86,677-680,2007.(SCI) (11)Er 3+ -Yb 3+co-dopedglasswaveguideamplifiersusingion exchangeandfield-assistedannealing,OpticsCommunications,268,300-304,2006.(SCI) (12)Fabricationof32×32ArrayedWaveguideGratingUsing FluorinatedPolymers,ChinesePhysicsLetters,22,1955-1957,2005.(SCI) (13)一种基于五元素模型的MOS电容测量方法,张希珍,陈 宝玖,于涛,中国专利,申请号201610522936.X,专利授权。