B. S. 1996, University of Sonora, Mexico M. S. 1998, Saltillo Tech, Mexico Ph.D. 2002, University of North Texas, USA

Felectronics is an exciting technology which requires expertise in several areas such as physics, chemistry and engineering. Therefore, the students in our group will not only gain experience with state-of-the-art instrumentation and techniques but also gain an understanding of the inter-disciplinary nature of this area. Students also interact with our collaborators at several US universities and laboratories, as well as with collaborators abroad. The Flexible Electronics group in the Materials Science Department at UTD, is focused in the development and integration of these different components. Some of the current projects include:

Sensors for Detecting Radiation Nano-Engineered Materials for Flexible Electronics Process Integration (nMOS, pMOS, CMOS, etc.) Device modeling and Simulation

AL Salas-Villasenor, I Mejia, M Sotelo-Lerma, BE Gnade, MA Quevedo-Lopez. "Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition" Applied Physics Letters 101 (1) (2013) 262103-262103-5.

Israel Mejia, Ana L Salas-Villasenor, Dongkyu Cha, Husam N Alshareef, Bruce E Gnade, Manuel A Quevedo-Lopez. "Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Transistors" IEEE Transactions on Electron Devices 60 (2012) 327-332.

Murphy, J.W., Kunnen, G.R., Mejia, I., MA Quevedo-Lopez., Allee, D., Gnade, B. "Optimizing diode thickness for solid state thermal neutron detectors" Applied Physics Letters 101 (14) (2012) 143506.

D Mao, I Mejia, AL Salas-Villasenor, M Singh, H Stiegler, BE Gnade, MA Quevedo-Lopez "Ferroelectric random access memory based on one-transistor�one-capacitor structure for flexible electronics" Organic Electronics 14 (2) (2012) 505-510.

Mejia, I., Salas-Villasenor, A.L., Avendano-Bolivar, A., Horvath, J., Stiegler, H., Gnade, B.E., and M. A. Quevedo-Lopez. "Low-temperature hybrid CMOS circuits based on chalcogenides and organic TFTs." IEEE Electron Device Letters 32 (2011): 1086-1088. doi:10.1109/LED.2011.2157801.