Phd in solid state electronics (amorphous silicon), University of Liverpool, 2000. Coordinator of PolyNet Research Platform.

Organic device fabrication, characterization and modelling. Theory of organic materials and devices.

Barrier tuning of atomic layer deposited Ta 2 O 5 and Al 2 O 3 in double dielectric diodes Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition (Invited) Tunnel-Barrier Rectifiers for Optical Nantennas. Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in resonant tunnelling diodes for terahertz applications Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)(x)(Al2O3)(1-x) as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors Wider Memory Window in Ta2O5 RRAM by Doping (Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films Atomic-layer deposited thulium oxide as a passivation layer on germanium Conduction mechanisms in Al-Ta2O5-Al2O3-Al rectifiers Engineered Ta2O5/Al2O3 and Nb2O5/Al2O3 tunnel barriers for next-generation low turn-on voltage high-speed rectifiers Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures Hafnia and alumina on sulphur passivated germanium 'Energy Harvesting Using THz Electronics' 'Hafnia on sulphur passivated germanium' Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature Hafnia and alumina on sulphur passivated germanium Interface Engineering Routes for a Future CMOS Ge-based Technology Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition Zero Bias Resonant Tunnelling Diode for Use in THz Rectenna 'Low EOT GeO2/Al2O3/HfO on Ge substrate using ultrathin Al deposition' 'Solar energy harvesting using THz electronics.' (Invited) 'Towards rectennas for solar energy harvesting' Analysis of electron capture at oxide traps by electric field injection Bound states within the notch of the HfO2/GeO2/Ge stack Interface engineering of Ge using thulium oxide: Band line-up study