As Director of the Cambridge Centre for Gallium Nitride, Prof Oliver’s research interests focus on the characterization and exploitation of nanoscale structures in GaN-based materials. The broad aim of my work is to achieve improved performance in GaN-based electronic and optoelectronic devices and to develop and implement novel device concepts. Cambridge is also the main supplier of nitride epitaxy in the EPSRC National Epitaxy Facility (NEF), and provides nitride materials to academics across the UK

Crystal growth and Thin Films Device Materials and Related Physics Electron Microscopy Nanomaterials Fabrication and Characterisation Semiconducting and Quantum Materials Spectroscopy

Massabuau, F. C.-P.; Griffin, P. H.; Springbett, H. P.; Liu, Y.; Kumar, R. V.; Zhu, T.; Oliver, R. A. "Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching", APL Materials, 8, (2020) 031115, DOI: 10.1063/1.5142491 Lee, L. Y.; Frentrup, M.; Vacek, P.; Kappers, M. J.; Wallis, D. J.; Oliver, R. A., "Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM", J. Appl. Phys., 125, (2019) 105303, DOI: 10.1063/1.5082846 Lim, K. T. P.; Deakin, C.; Ding, B. N.; Bai, X. Y.; Griffin, P.; Zhu, T. T.; Oliver, R. A.; Credgington, D., "Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN", APL Materials, 7, (2019) 021107, DOI: 10.1063/1.5083037 Wang, T.; Puchtler, T. J.; Zhu, T.; Jarman, J. C.; Nuttall, L. P.; Oliver, R. A.; Taylor, R. A. , "Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots", Nanoscale, 9, (2017) 9421-9427, DOI: 10.1039/c7nr03391e Zhu, T.; Liu, Y.; Ding, T.; Fu, W. Y.; Jarman, J.; Ren, C. X.; Kumar, R. V.; Oliver, R. A., "Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification", Scientific Reports, 7, (2017) 45344, DOI: 10.1038/srep45344 Massabuau, F. C-P.; Rhode, S. L.; Horton, M. K.; O'Hanlon, T. J.; Kovacs, A.; Zielinski, M. S.; Kappers, M. J.; Dunin-Borkowski, R. E.; Humphreys, C. J.; Oliver, R. A. , "Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties", Nano Letters, 17, (2017) 4846-4852, DOI: 10.1021/acs.nanolett.7b0169