Education D.Phil of Condensed Matter Physics, Oxford University (UK) / 2006 Experience Process Engineer / TSMC (Taiwan) / Oct 1997 – Jul 1999 Senior R & D Engineer, TSMC (Taiwan) / Jul 1999 – Jun 2002 Assistant Professor, School of Materials Science and Engineering, Nanyang Technological University (Singapore) / Jun 2006 – Dec 2009 Associate Professor, Academia Sinica (Taiwain) / Feb 2010 – Apr 2014 Full Professor (Tenured), Institute of Atomic and Molecular Sciences, Academia Sinica (Taiwan) / May 2014 – Jul 2014 Associate Professor, King Abdullah University of Science and Technology (Saudi Arabia) / Aug 2014 – Jul 2016 Full Professor, King Abdullah University of Science and Technology (Saudi Arabia) / Aug 2016 – Dec 2017 Director, Corporate Research in Taiwan Semiconductor Manufacturing Company (Taiwan)/Dec2017-present SHARP Professor, University of New South Wales (Australia) / Sep2018-Mar2021 Mar2021-Jan 2025 Professor: Chair Professor at University of Hong Kong

We are developing advanced device technologies for ultra-scaled transistors based on novel 2D semiconductors. New materials with ~ 1nm thickness are required for efficient gate control in a short-channel device. Metal-to-2D semiconductor contact is also the key.

Engineering grain boundaries in monolayermolybdenum disulfide for efficient water/ion separation. Jie Shen, Areej Aljarb, Yichen Cai, Xing Liu,Jiacheng Min, Yingge Wang, Qingxiao Wang, Chenhui Zhang, Cailing Chen, Mariam Hakami, Jui-Han Fu, Hui Zhang, Guanxing Li, Xiaoqian Wang, Zhuo Chen, Jiaqiang Li, Xinglong Dong Kaimin Shih, Kuo-Wei Huang, Vincent Tung*, Guosheng Shi*, Ingo Pinnau*, Lain-Jong Li*, and Yu Han* DirectlyProbing Carrier Injection Length in Contacts of Two-Dimensional Transistors. Zi-Liang Yang, Bo-Chao Huang, Yi Wan, Kai-WeiTseng, Shu-Ting Yang, Han-Chieh Lo, Fangyuan Zheng, Ni Yang, Wanqing Meng, Jiacheng Min, Po-Cheng Huang, Yann-Wen Lan*, Lain-Jong Li*& Ya-Ping Chiu* Bridging themobility gap in WSe2 by defect control. Hang Liu, Ni Yang, Jiacheng Min, Mykolya Telychko, Caisheng Tang, Yi Wan, Chuanqi Zhang, Wanying Li, Zhengwei Zhang, Xiangdong Yang, George Harrison, Zhongzhe Liu, Tianchao Guo, Jing-kai Huang, Shadi Fatayer, Kaimin Shih, Song Liu, Thomas D. Anthopoulos, Kian Ping Loh*, Lain-jong Li*, and Xu Lu* Revisiting theEpitaxial Growth Mechanism of 2D TMDC Single Crystal. Chenyang Li, Fangyuan Zheng, Jiacheng Min, NiYang, Yu‐Ming Chang, Haomin Liu,Yuxiang Zhang, Pengfei Yang, Qinze Yu, Yu Li, Zhengtang Luo, Areej Aljarb, Kaimin Shih, Jing‐KaiHuang, Lain‐Jong Li*, Yi Wan*Advanced Materials (2024) https://doi.org/10.1002/adma.202404923 MXene-FiberComposite Membranes for Permeable and Biocompatible Skin-Interfaced Iontronic Mechanosensing. Yichen Cai, Jie Shen, Nan Yang, Zhuo Chen, Yi Wan, Yu-Hsiang Chiang, Liang Ying Ee, Yingge Wang, Vincent Tung, Yu Han, Ingo Pinnau, Kuo-Wei Huang, Lain-jong Li*, Xiaochen Dong* Nano Lett. (2024) 24, 39, 12333–12342 MicroscopicCharacterizations for 2D Material-based Advanced Electronics. Fang-Yuan Zheng & Lain-Jong Li*Micron (2024) https://doi.org/10.1016/j.micron.2024.103707 Projectedperformance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes. Yu-Cheng Lu, Jing-Kai Huang, Kai-Yuan Chao, Lain-Jong Li* & Vita Pi-Ho Hu*Nature Nanotechnology(2024). https://doi.org/10.1038/s41565-024-01693-3 PhotoprogrammedMultifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer‐SortedSemiconducting Single‐Walled CarbonNanotubes for Image Recognition, Nianzi Sui; Yixi Ji; MinLi; Fanyuan Zheng; Shuangshuang Shao; Jiaqi Li; Zhaoxin Liu; Jinjian Wu; Jianwen Zhao*; Lain‐Jong Li* Advanced Science (2024) DOI: 10.1002/advs.202401794 Sensingfugitive hydrogen emissions, Yichen Cai; Sudipta Chatterjee; Khaled N. Salama; Lain-Jong Li; Kuo-Wei Huang Nature Reviews Electrical Engineering (2024) DOI: 10.1038/s44287-024-00039-4 Self-trappedexciton emission in highly polar hydronium-based perovskite triggered by antimony doping. B. Zhou#, F.Fang#, Z. Liu, H. Zhong, K. Zhou, H. Hu, J. Min, S. Fan, J. Nie, J.-K. Huang, L.-J. Li, H. Li*, Y. Wan*,Y. Shi*. Journal of the American Chemical Society (2024) 146, 22, 15198–15208. Identifyingatomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study Hengze Qu, ShengliZhang, Jiang Cao, Zhenhua Wu, YangChai, Weisheng Li, Lain-Jong Li, Wencai Ren, Xinran Wang, Haibo Zeng Science Bulletin (2024), 69(10), 1427-1436 Atomically Thin Decoration Layers for RobustOrientation Control of 2D Transition Metal Dichalcogenides.Y.-M. Chang, N.Yang, J. Min, F. Zheng, C.-W. Huang, J.-Y. Chen, Y. Zhang, P. Yang, C. Li,H.-Y. Liu, B. Ye, J. Xu, H.-Y. Chen, Z. Luo, W.-W. Wu,K. Shih, J.-K. Huang, L.-J. Li*, Y. Wan*. Advanced Functional Materials (2023) 2311387. Cascadedcompression of size distribution of nanopores in monolayer graphene, JiangtaoWang, Chi Cheng, Xudong Zheng, Juan Carlos Idrobo, Ang-Yu Lu, Ji-Hoon Park,Bong Gyu Shin, Soon Jung Jung, Tianyi Zhang, Haozhe Wang, Guanhui Gao, Bongki Shin, Xiang Jin, Long Ju, Yimo Han, Lain-Jong Li, Rohit Karnik & Jing Kong.Nature (2023) 623, pages956–963 Bi2O2Se-Based Bimode Noise Generator for the Application of Generative Adversarial Networks Bo Liu, XingYi Zheng, Dharmendra Verma, Yudi Zhao, Hanyuan Liang, Lain-Jong Li, Jenhui Chen, Chao-Sung Lai ACS Applied Materials & Interfaces, 15(42), 49478-49486. Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers Shin-Wei Shen, CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li U.S. Patent 11,784,225[P]. 2023-10-10. Semiconductordevice with two-dimensional materials CHEN Tse-An, Lain-Jong Li US Patent App. 18/316,096 Method ofmanufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode. Tzu-AngChaoGregory Michael PitnerTse-An CHENLain-Jong LiYu Chao Lin U.S. Patent 11,749,528[P]. 2023-9-5. Pieces of 2Dmaterials: The next step to crystallize the polycrystalline domains Jui-Han Fu, YichenCai, Jie Shen, Hayato Sugisaki, Kohei Nanjo, Karin To, Chia-Wen Wu, Yu Han, Lain-Jong Li, Vincent Tung Matter (2023) https://doi.org/10.1016/j.matt.2023.05.034 InterfacialReconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides Areej Aljarb*,Jiacheng Min, Mariam Hakami, Jui-Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti Naphade, Emre Yengel, Mohamed Nejib Hedhili, Roaa Sait, Abdul-Hamid Emwas, Arwa Kutbee, Merfat Alsabban, Kuo-Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent Tung*, and Lain-Jong Li* ACS Nano (2023) https://doi.org/10.1021/acsnano.2c12103 Area-SelectiveGrowth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors Lin-Yun Huang,Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu,Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, ChihI Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li*, and Kung-Hwa Wei*ACS Materialsletter (2023) https://doi.org/10.1021/acsmaterialslett.3c00094 Engineering grainboundaries in monolayer molybdenum disulfide for an efficient water/ion separation Yu Han, Jie Shen,Areej Aljarb, Yichen Cai, Xing Liu, Jiacheng Min, Yingge Wang, Chenhui Zhang, Cailing Chen, Marim Hakami, Jui-Han Fu, Hui Zhang, Guanxing Li, Xiaoqian Wang, Zhuo Chen, Jiaqiang Li, Xinglong Dong, Vincent Tung, Guosheng Shi, Ingo Pinnau, Lain-Jong Li Research SquarePlatform LLC (2023) https://doi.org/10.21203/rs.3.rs-2630063/v1 Semiconductordevice and manufacturing method thereof Ming-Yang Li,Lain-Jong Li, YEH Han, Wen-hao Chang US Patent App.17/984,246 Semiconductorstructure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers Shin-Wei Shen,CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li US Patent App.17/460,329 Epitaxialsubstitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides Kenan Zhang,Yihong She, Xiangbin Cai, Mei Zhao, Zhenjing Liu, Changchun Ding, Lijie Zhang, Wei Zhou, Jianhua Ma, Hongwei Liu, Lain-Jong Li, Zhengtang Luo, Shaoming Huang Nature Nanotechnology (2023) https://doi.org/10.1038/s41565-023-01326-1 Oriented lateralgrowth of two-dimensional materials on c-plane sapphire Jui-Han Fu,Jiacheng Min, Che-Kang Chang, Chien-Chih Tseng, Qingxiao Wang, Hayato Sugisaki, Chenyang Li, Yu-Ming Chang, Ibrahim Alnami, Wei-Ren Syong, Ci Lin, Feier Fang, Lv Zhao, Tzu-Hsuan Lo, Chao-Sung Lai, Wei-Sheng Chiu, Zih-Siang Jian, Wen-Hao Chang, Yu-Jung Lu, KaiminShih, Lain-Jong Li, Yi Wan, Yumeng Shi & Vincent Tung NatureNanotechnology (2023) https://doi.org/10.1038/s41565-023-01445-9 Fast water transport and molecular sieving through ultrathin ordered conjugated-polymer-framework membranes Jie Shen, Yichen Cai, Chenhui Zhang, Wan Wei, Cailing Chen, Lingmei Liu, Kuiwei Yang, Yinchang Ma, Yingge Wang, Chien-Chih Tseng, Jui-Han Fu, Xinglong Dong, Jiaqiang Li, Xi-Xiang Zhang, Lain-Jong Li, Jianwen Jiang, Ingo Pinnau, Vincent Tung & Yu Han Nature Materials (2022) doi.org/10.1038/s41563-022-01325-y Low-defect-density WS2 by hydroxide vapor phase deposition Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng, Vincent Tung & Lain-Jong Li Nature Communications (2022) DOI 10.1038/s41467-022-31886-0 Direct Band Gap in Multilayer Transition Metal Dichalcogenide Nanoscrolls with Enhanced Photoluminescence Ci Lin, Liang Cai, Jui-Han Fu, Shahid Sattar, Qingxiao Wang, Yi Wan, Chien-Chih Tseng, Chih-Wen Yang, Areej Aljarb, Ke Jiang, Kuo-Wei Huang, Lain-Jong Li, Carlo Maria Canali, Yumeng Shi, and Vincent Tung ACS Materials Lett. 2022, 4, 8, 1547–1555 Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 TransistorMing-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Yuxuan Cosmi Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lin-Yun Huang, Chao-Ching Cheng, Wei-Yen Woon, Szuya Liao, Chih-I Wu, Lain-Jong Li, Iuliana Radu, H-S Philip Wong, Han Wang Electric-field-induced metal-insulator transition and quantum transport in large-area polycrystalline MoS2 monolayers Hao Ou; Tomoyuki Yamada; Masaya Mitamura; Yusuke Edagawa; Tatsuma D. Matsuda; Kazuhiro Yanagi; Chang-Hsiao Chen; Lain-Jong Li; Taishi Takenobu; Jiang Pu.Physical Review Materials (2022) DOI: 10.1103/PhysRevMaterials.6.064005 Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride Caleb Z. Zerger; Linsey K. Rodenbach; Yi-Ting Chen; Benjamin Safvati; Morgan Z. Brubaker; Steven Tran; Tse-An Chen; Ming-Yang Li; Lain-Jong Li; David Goldhaber-Gordon et al.Nano Letters (2022) DOI: 10.1021/acs.nanolett.1c04274 Bi2O2Se-Based True Random Number Generator for Security Applications Bo Liu; Ying-Feng Chang; Juzhe Li; Xu Liu; Le An Wang; Dharmendra Verma; Hanyuan Liang; Hui Zhu; Yudi Zhao; Lain-Jong Li et al.ACS nano (2022) DOI: 10.1021/acsnano.2c01784 2D Materials‐Based Static Random‐Access Memory Chang‐Ju Liu; Yi Wan; Lain‐Jong Li; Chih‐Pin Lin; Tuo‐Hung Hou; Zi‐Yuan Huang; Vita Pi‐Ho Hu Advanced Materials (2022) DOI: 10.1002/adma.202107894 Bottom-Up Synthesized All-Thermal-Catalyst Aerogels for Heat-Regenerative Air Filtration X Ji, J Zhao, SM Jung, AIH Hrdina, MJ Wolf, Xiulin Yang, Geoffrey Vaartstra, Helen Xie, Shao-Xiong Lennon Luo, Ang-yu Lu, Roy E. Welsch, Evelyn N. Wang, Lain-Jong Li, and Jing Kong Nano Letters 21 (19), 8160-8165 1 2021 The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening S Park, T Schultz, D Shin, N Mutz, A Aljarb, Hee Seong Kang, Chul-Ho Lee, Lain-Jong Li, Xiaomin Xu, Vincent Tung, Emil J. W. List-Kratochvil, Sylke Blumstengel, Patrick Amsalem, and Norbert Koch ACS nano 15 (9), 14794-14803 2 2021 Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices H Ou, H Matsuoka, J Tempia, T Yamada, T Takahashi,Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu, and Taishi Takenobu ACS nano 15 (8), 12911-12921 1 2021 Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride Chun-Yi Chou, Wei-Hao Lee, Chih-Piao Chuu, Tse-An Chen, Cheng-Hung Hou, Yu-Tung Yin, Ting-Yun Wang, Jing-Jong Shyue, Lain-Jong Li, and Miin-Jang Chen Chemistry of Materials 33 (14), 5584-5590 1 2021 Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures Soohyung Park,Haiyuan Wang,Thorsten Schultz,Dongguen Shin,Ruslan Ovsyannikov,Marios Zacharias,Dmitrii Maksimov,Matthias Meissner,Yuri Hasegawa,Takuma Yamaguchi,Satoshi Kera,Areej Aljarb,Mariam Hakami,Lain-Jong Li,V incent Tung,Patrick Amsalem,Mariana Rossi,Norbert Koch Advanced Materials 33 (29), 2008677 4 2021