B.Sc. in Physics, Lanzhou University, 1982 Ph.D. in Physics, Illinois Institute of Technology, 1987

His research interest is in computational condensed matter & materials physics, focusing mainly on the understanding of fundamental properties of materials for advanced technologies, and prediction of new materials based on ab initio electronic structure calculations and materials genomicapproach. Over the years, his group has studied various materials including structures, properties and applications of two-dimensional materials, dilute magnetic semiconductors, graphene spintronics, topological insulators, high-k materials, semiconductor and metal surfaces and interfaces, materials for magnetic data storage, etc. He has an established track record in collaboration with experimentalists.

“Atomic-orbital-free intrinsic ferromagnetism in electrenes”, Jun Zhou, Yuan Ping Feng and Lei Shen,Physical Review B 102 (18), 180407R (2020). “2DMatPedia, an open computational database of two-dimensional materials from top-down and bottom-up approaches”, J Zhou, L Shen, M D Costa, K A Persson, S P Ong, P Huck, Y Lu, X Y Ma, Y M Chen, H M Tang & Y P Feng, Scientific Data, 6, 86 (2019). DOI: 10.1038/s41597-019-0097-3. “Pressure induced topological phase transition in layered Bi2S3”, M Yang, Y Z Luo, M G Zeng, L Shen, Y H Lu, J Zhou, S J Wang, I K Sou, and Y P Feng, Y P, Phys. Chem. Chem. Phys., 19, 29372 (2017). “Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon”, L Shen, M G Zeng, Y H Lu, M Yang, and Y P Feng , Physical Review Letters 111 (23), 236803 (2013). “Graphene-based spin logic gates”, M G Zeng, L Shen, H B Su, C Zhang, and Y P Feng, Applied Physics Letters, 98 (9), 092110 (2011). “Room-temperature ferromagnetism in carbon-doped ZnO”, H Pan, J Yi, L Shen, R Wu, J H Yang, J Y Lin, Y P Feng, J Ding, L H Van and J H Yin, Physical Review Letters, 99 (12), 127201 (2007).