2008－至今：中国科学院微电子研究所； 2006－2008年：日本半导体MIRAI项目； 2003－2006年：日本东京大学，获得工学博士学位； 1998－2003年：兰州大学，获得理学博士学位； 1997－1998年：中国空间技术研究院第510研究所； 1992－1997年：兰州大学，本科学习。

纳米尺度CMOS器件与工艺技术

1.XiaoleiWang,KaiHan,WenwuWang,ShijieChen,XueliMa,DapengChen,JingZhang,JunDu,YuhuaXiong,AnpingHuang,“Physicaloriginofdipoleformationathigh-k/SiO2interfaceinmetal-oxide-semiconductordevicewithhigh-k/metalgatestructure”Appl.Phys.Lett.(Inpress). 2.WenwuWang,KojiAkiyama,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“EffectofAldiffusion-inducedpositiveflatbandvoltageshiftontheelectricalcharacteristicsofAl-incorporatedhigh-kpMOSFETs”J.Appl.Phys.105(2009)064108. 3.WenwuWang,WataruMizubayashi,KojiAkiyama,ToshihideNabatame,AkiraToriumi,“SystematicinvestigationonanomalouspositiveVfbshiftinAl-incorporatedhigh-kgatestacks”Appl.Phys.Lett.92(2008)162901. 4.QiuxiaXu,GaoboXu,WenwuWang,DapengChen,ShaliShi,ZhengshengHan,TianchunYe,“StudyoncharacteristicsofthermallystableHfLaONgatedielectricwithTaNmetalgate”Appl.Phys.Lett.93(2008)252903. 5.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“PreparationofconductiveHfNbypostrapidthermalannealing-assistedMOCVDanditsapplicationtometalgateelectrode”Microelectron.Eng.85(2008)320. 6.KojiAkiyama,WenwuWang,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“OxygenvacancyinHfO2/ultra-thinSiO2gate-stack：ComprehensiveunderstandingofVfbroll-off”Symp.VLSITechnology.Dig.Tech.(2008)80. 7.WataruMizubayashi,KojiAkiyama,WenwuWang,MinoruIkeda,KunihikoIwamoto,YuuichiKamimuta,AkitoHirano,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“NovelVThtuningprocessforHfO2CMOSwithoxygen-dopedTaCx”Symp.VLSITechnology.Dig.Tech.(2008)42. 8.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“DielectricevolutioncharacteristicsofHfCNmetalelectrodegatedMOSstacks”J.Electrochem.Soc.154(2007)G25. 9.KojiAkiyama,WenwuWang,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“Vfbroll-offinHfO2gatestackafterhightemperatureannealingprocess”Symp.VLSITechnology.Dig.Tech.(2007)72. 10.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“Hightemperatureannealing-inducedphasetransformationcharacteristicofnitrogen-richhafniumnitridefilms”Jpn.J.Appl.Phys.45(2006)L1183.