教育背景 2002.09-2006.07，四川大学，学士 2006.09-2009.06，四川大学，硕士 2012.09-至今，中国科学院大学，博士研究生 工作简历 2009.07-至今，中国科学院微电子研究所

IGBT/FRD等电力电子器件及工艺研究

[1].TianXiaoli,ChuWeili,LuJiang,etal.“Anoveloptimizationdesignfor3.3kVinjection-enhancedgatetransistor”.JournalofSemiconductors,2004,35(1):014005-1 [2].TianXiaoli,LuJiang,TengYuan,etal.“Backsideoptimizationforimprovingavalanchebreakdownbehaviorof4.5kVIGBT”.JournalofSemiconductors,已接收. [3].出版译著：B.J.Baliga著，第八章翻译，功率半导体器件基础，电子工业出版社,2013 [4].ZhangWenliang,ZhuYangjun,LuShuojin,TianXiaoli,TengYuan.“IncreaseoftheReliabilityoftheJunctionTerminationsofReverse-ConductingInsulatedGateBipolarTransistorbyAppropriateBacksideLayoutDesign”.ElectronDeviceLetters,IEEE,已接收. [5].ZhangWenliang,TianXiaoli,TanJingfei,etal.“Thesnap-backeffectofRC-IGBTanditssimulations”.JournalofSemiconductors,2013,34(7):86-90. [6].LuJiang,TianXiaoli,LuShuojin,etal.“DynamicavalanchebehaviorofpowerMOSFETsandIGBTsunderunclampedinductiveswitchingconditions”.JournalofSemiconductors,2013,34(3):26-30.