新沟道材料（锗，三五族化合物等）CMOS器件与工艺 基于新沟道材料的新结构CMOS器件与工艺 先进纳米CMOS器件的器件物理与可靠性

赵毅.High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications,,168,:1-4 赵毅.Aggressive EOT Scaling of Ge pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation,,37,7:831-834 赵毅.Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs-AC Versus Circuit-Speed Random Stress,,63,9:3669-3676 赵毅.High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing,,63,7:2665-2670 赵毅.Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques,,109,2:- 赵毅.Reduction in Modulus of Suspended Sub-2 nm Single Crystalline Silicon Nanomembranes,,4,19:- 赵毅.Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields,,62,4:1136-1142