导师简历： 1．教育经历 2002.9-2005.6中国科学院物理研究所,获凝聚态物理专业博士学位 1999.9-2002.6华中科技大学物理系,获光学专业硕士学位 1995.9-1999.6湖北师范学院物理系，获物理教育专业理学学士学位 2.工作经历 2010.8-至今扬州大学物理科学与技术学院 2006.5–2008.5日本大阪大学电子工程系JSPS博士后

研究方向： （1）半导体低维结构的物理特性计算 （2）半导体自旋电子学

研究内容 （1）研究半导体纳米结构中激子和双激子效应，通过量子调控将双激子态调回到简并态从而实现纠缠光子对。 （2）研究半导体纳米结构中自旋和量子比特。 科研项目 江苏省高校自然科学研究面上项目：InAs/GaAs量子点自旋动力学与自旋调控的理论研究 国家级大学生创新创业训练计划资助项目：GaN/InGaN太阳能电池性能的研究

[1]ShudongWu*,LichunWang,HuoquanLi,andXianghuaZeng,TuningoftheintersubbandabsorptioninashallowInAs/InPquantumwirebyatransverseelectricfield,SuperlatticesandMicrostructures67,33(2014). [2]ShudongWu*andWeiweiXia,ExcitonpolarizabilityandabsorptionspectrainCdSe/ZnSnanocrystalquantumdotsinelectricfields,J.Appl.Phys.114,043709(2013). [3]ShudongWu*andStankoTomić,Excitonstatesandoscillatorstrengthsinacylindricalquantumwirewithfinitepotentialundertransverseelectricfield,J.Appl.Phys.112,033715(2012). [4]ShudongWu*andLiWan,ElectronicstructuresinaCdSesphericalquantumdotinamagneticfield:Diagonalizationmethodandvariationalmethod,J.Appl.Phys.111,063711(2012). [5]ShudongWu*andLiWan,Excitonstatesandexcitonicabsorptionspectrainacylindricalquantumwireundertransverseelectricfield,Eur.Phys.J.B.85,12(2012). [6]ShudongWu*andLiWan,ThermaldependenceoftheopticalgainandthresholdcurrentdensityofGaInNAs/GaAs/AlGaAsquantumwelllasers,J.Appl.Phys.110,123109(2011). [7]ShudongWu*,Excitonbindingenergyandexcitonicabsorptionspectrainaparabolicquantumwireundertransverseelectricfield,PhysicaB406,4634(2011). [8]ShudongWu*,YonggeCao,StankoTomić,andFumitaroIshikawa,TheopticalgainandradiativecurrentdensityofGaInNAs/GaAs/AlGaAsseparateconfinementheterostructurequantumwelllasers,J.Appl.Phys.107,013107(2010). [9]ShudongWu,ZhiHuang,YuanLiu,QiufengHuang,WangGuo,YonggeCao,TheeffectsofindiumsegregationonthevalencebandstructureandopticalgainofGaInAs/GaAsquantumwells,PhysicaE41,1656(2009). [10]ShudongWu,ZhiHuang,YuanLiu,QiufengHuang,WangGuo,YonggeCao,TheeffectsofindiumsegregationonexcitonbindingenergyandoscillatorstrengthinGaInAs/GaAsquantumwells,SuperlatticesandMicrostructures46,618(2009). [11]ShudongWu*,M.Kato,M.Uchiyama,K.Higashi,F.Ishikawa,andM.Kondow,N2gasflowdrivenunintentionalincorporationofAlduringthegrowthofmolecularbeamepitaxy,AppliedPhysicsExpress1,035004(2008). [12]ShudongWu*,M.Kato,M.Uchiyama,K.Higashi,F.Ishikawa,andM.Kondow,EffectoftheunintentionalincorporationofAlduringthemolecularbeamepitaxialgrowthofGaInNAsquantumwell.Phys.Stat.Sol.(C)5,2736(2008). [13]ShudongWu,W.X.Wang,L.W.Guo,Z.H.Li,X.Z.Shang,F.Liu,Q.Huang,andJ.M.Zhou,OpticalpropertiesofAlAs/GaAsquantumwellswithantimonyasasurfactantbysolidsourcemolecularbeamepitaxy,JournalofCrystalGrowth,278,548(2005). [14]ShudongWu,L.W.Guo,W.X.Wang,Z.H.Li,X.Z.Shang,H.Y.Hu,Q.Huang,J.M.Zhou,TheincorporationbehaviorofarsenicandantimonyinGaAsSb/GaAsgrownbysolidsourcemolecularbeamepitaxy,JournalofCrystalGrowth,270,359(2004).