闽南师范大学理学学士，物理学专业； 厦门大学工学博士，微电子学与固体电子学专业。

GaN基半导体材料生长和光电器件研究，半导体照明检测技术研究

1.Lu H, Lu Y, Zhu L*, Lin Y, Guo Z, Liu T, Gao Y, Chen G, Chen Z, Efficient Measurement of Thermal Coupling Effects on Multi-chip Light-emitting Diode, IEEE Transactions on Power Electronics,Issue: 99, 2017, DOI: 10.1109/TPEL. 2017.2653193 (IEEE: SCI/EI) 2.Lin Y, Peng Z, Zhu L*, Yan W, Shih T, Wu T, *Lu Y,Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes， Applied Physics Express, 2016,9, 092101-1-0921014 3.ZengF, Zhu L*, Liu W, Liu W, Wang H, Liu B, Study on Optical Properties of Indium-Graded SemipolarInGaN/GaN Quantum Well, IEEE Photonics Journal, 2016, 8(3), 2200413. 4.Zeng F, Zhu L*, Liu W, Li X , Liu W, Chen B, Lee Y, Feng Z, Liu B, Carrier localization and phonon-assisted hopping effects in semipolarInGaN/GaN light-emitting dioses grown by selective area epitaxy, Journal of Alloys and Compounds, 2016,656, 881-886.（JCR二区, SCI收录, IDS 号: CW5QH, 2016.01） 5.Wang H,*Lin Y, Zhu L, Lu Y, Tu Y, Liu Z, DengZ,Tang W, Gao Y, Chen Z，Temperature dependent carrier localization in AlGaInN near-ultraviolet light-emitting diodes, Optics Express, 2016, 24(11), 11594-11600. 6.Xiao H, Lu Y, Shih T, Zhu L, Lin S, Pagni P, Chen Z, Improvements on remote diffuser-phosphor-packaged light-emitting diode systems, IEEE Photonics Journal, 6(2)，2014, 8200108