教育经历 1995.9-1999.7：中国科学技术大学应用物理系学习，获得理学学士学位 1999.9-2006.1: 中国科学技术大学合肥微尺度物质科学国家实验室凝聚态物理学专业学习，获得理学博士学位

工作经历 2006.2-2009.2：鲁东大学物理与光电工程学院从事教学与科研工作 2009.3-2011.2：加拿大西安大略大学Surface Science Western，从事博士后研究工作 2011.3-至今：鲁东大学物理与光电工程学院从事教学与科研工作

紫外光电材料与器件 氧化物半导体低维材料光电性质研究 光学材料中物理问题及固体发光

(1) Room Temperature Electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg Heterojunction Device Grown by PLD, Electron. Mater. Lett. 2014, 10(3): 661-664. (2) White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias, J. Opt., 2013, 15(2): 025003 (6pp). (3) Crystallinity increases in octadecylphosphonic acid Langmuir-Blodgett films with increasing number of layers, Thin Solid Films, 2013, 537: p242-246. (4) Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer，Optics Express, 2013, 21(14): 16578-16583. (5) Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes, Chin. Phys. B, 2013, 22(12): 128502(5pp). (6) Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers, Journal of Physics D: Appled Physics, 2012, 45: 485103 (6pp). (7) Electroluminescence from ZnO nanorod/unetched GaN LED wafers under forward and reverse biases, J. Opt., 2012, 14(12): 125601(1-6). (8) Optical properties of ZnO thin films grown on diamond-like carbon by pulsed laser deposition, Optoelectronics Letters，2012, 8(6): 0445-0448.