教育背景 1999.9-2003.7 华南理工大学 电子科学与技术 本科 2003.9-2008.6 华南理工大学 微电子学与固体电子学 硕博连读研究生 获博士学位 工作经历 2008.7 - 现在 暨南大学 信息科学技术学院 电子工程系 讲师、副教授 2014.7 – 2015.7 美国中佛罗里达大学 电子工程系 访问学者

半导体器件模型

[1] Wanling Deng, Junkai Huang, Xiaoyu Ma, Juin J. Liou, Fei Yu. A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands. Solid-State Electronics, 2016，115： 54–59.

[2] Xiaoyu Ma, Junkai Huang, Jielin Fang, Wanling Deng*. A compact model of the reverse gate-leakage current in GaN-based HEMTs. Solid-State Electronics， 2016，126 ：10–13

[3] Wanling Deng, Junkai Huang, Xiaoyu Ma, Juin J. Liou. An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs. IEEE Electron Device Letters, 2015, 36(2): 108-110.

[4] Wanling Deng, Junkai Huang, Xiaoyu Ma, Tao Ning. An explicit surface-potential-based model for amorphous IGZO thin-film transistors including both tail and deep states. IEEE Electron Device Letters, 2014, 35(1): 78-80.

[5] Wanling Deng, Junkai Huang, Xiyue Li. Surface-Potential-Based Drain Current Model of Polysilicon TFTs With Gaussian and Exponential DOS Distribution. IEEE Trans. Electron Devices, 2012, 59(1): 94-100.

[6] Wanling Deng, Junkai Huang. A Physics-Based Approximation for the Polysilicon Thin-Film Transistors Surface Potential. IEEE Electron Device Letters, 2011,32(5): 647-649