殷红 照片

殷红

副教授

所属大学: 吉林大学

所属学院: 物理学院

邮箱:
hyin@jlu.edu.cn

个人主页:
https://nlshm-lab.jlu.edu.cn/info/1057/1563.htm

个人简介

2000.06毕业于吉林大学物理系,2003.06于吉林大学超硬材料国家重点实验室获得理学硕士学位。2003.09在德国乌尔姆大学攻读博士学位,于2007年11月获得理学博士学位,随后留校开展博士后研究。2008.05开始在比利时海塞尔特大学任长期研究员。2013.07以学术骨干身份引进吉林大学超硬材料国家重点实验室任副教授。主要研究领域为超硬多功能薄膜材料、低维纳米材料等。已发表SCI和EI论文多篇,撰写专著1部,授权专利多项。目前主持国家自然科学基金3项、教育部留学回国基金1项、省部级基金3项和人才引进基金1项。

研究领域

超硬多功能薄膜、宽禁带半导体、低维纳米材料等

近期论文

W. Gao, Y. Zhao, and H. Yin*, Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets, RSC Adv., 2018, 8, 5976. W. Gao, Y. Zhao, H. Yin* and H. D. Li, Self-assembly based plasmonic nanoparticle array coupling with hexagonal boron nitride nanoshseets, Nanoscale, 2017, 9, 13004. Y. Zhao, W. Gao, B. Xu, Y. A. Li, H. D. Li, G. R. G, and H. Yin*, Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas, Chin. Phys. B, 2016, 25, 106801. H. Yin*, Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping, Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974805 (February 26, 2016); doi:10.1117/12.2208392. H. Yin*, P. Ziemann,In-situSi doping of heteroepitaxially grown c-BN thin films at different temperatures, RSC Adv., 2015, 5, 38170. H. Yin*, P. Ziemann, Multiple delta doping of single crystal c-BN films heteroepitaxially grown on (001)diamonds, Appl. Phys. Lett., 2014, 104(25), 252111. J. Li, H. D. Li*, H. Yin, Structural evolution, tunable electronic and magnetic properties of bare and semi-hydrogenated two-dimensional cubic boron nitride nanosheets, Chem. Phys. Lett., 2014, 610-611,198. H. Yin*, Q. S. Wang, S. Geburt, S. Milz, B. Ruttens, G. Degutis, J. D’Haen, L. C. Shan, S. Punniyakoti, M. D’Olieslaeger, P. Wagner, C. Ronning, H. G. Boyen, Controlled synthesis of ultrathin ZnO nanowires using Micellar Au nanoparticles as catalysts, Nanoscale, 2013, 5, 7046. H. Yin*, I. Pongrac, and P. Ziemann, Electronic transport in heavily Si doped cubic boron niride films expitaxially grown on diamond(001), J. Appl. Phys., 2008, 104, 023703.