冉广照
教授 博导
所属大学: 北京大学
所属学院: 物理学院
邮箱:
rangz@pku.edu.cn
个人主页:
https://faculty.pku.edu.cn/ranguangzhao/zh_CN/index/10080/list/index.htm
研究领域
分子半导体:材料,器件及物理 纳米半导体:材料,器件及物理 硅光子学:硅基发光与激光
近期论文
Passivated p-type silicon: Hole injection tunable anode material for organic light emission,.APPLIED PHYSICS LETTERS 92, 073303 Published: FEB 18 2008 Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode.CHEMICAL PHYSICS LETTERS 400, 401-405 DEC 21 2004 Room-temperature 1.54 um electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering.JOURNAL OF APPLIED PHYSICS 90, 5835 DEC 1 2001